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Dependence of breakdown voltage on the junction curvature in concentration profiled diodesGHATOL, A. A; SUNDARSINGH, V. P.Microelectronics. 1984, Vol 15, Num 6, pp 5-14, issn 0026-2692Article

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Les processus au stade de retard de l'amorçage dans l'argon et leur influence sur la formation d'une décharge volumique de nanosecondeKLIMENKO, K. A; KOZYREV, A. V; KOROLEV, YU. D et al.Fizika plazmy (Moskva, 1975). 1984, Vol 10, Num 1, pp 183-188, issn 0134-5052Article

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Test point selection methods for the self-testing based analogue fault diagnosis systemWU, C. C.IEE proceedings. Part G. Electronic circuits and systems. 1985, Vol 132, Num 5, pp 173-183, issn 0143-7089Article

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Zur anomalen Temperaturabhängigkeit der Durchlassspannung einiger Halbleiterdioden = Variation thermique anormale de la tension d'amorçage de diodes semiconductricesTHOM, F.Experimentelle Technik der Physik. 1983, Vol 31, Num 3, pp 239-244, issn 0014-4924Article

Iterative exhaustive pattern generation for logic testingTANG, D. T; CHEN, C. L.IBM journal of research and development. 1984, Vol 28, Num 2, pp 212-219, issn 0018-8646Article

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